Phenitec Original Bipolar Transistor Charactristics Table
PNP A type = underdevelopment, Quantity = 5"wafer,* = typical,＄ = VCER,# = VCES
Chip VCBO
(V)		 VCEO
(V)		 VEBO
(V)		 IC
(A)		 hFE VCE(sat) fT Cob Complementary
Product		 Comment

(-)
VCE(V)
IC(A)
(V)
IC(A)
IB(A)
(MHz)
VCE(V)
IE(A)
(pF)
VCB(V)
300 300 7 0.1 60-280 10 10m 0.5 0.1 10m 65* 10 10m 4.5 20 High Voltage Driver
40 40 5 1 40-120 1 0.5 1 1 0.1 - - - - - - High Speed Switching
40 40 5 0.5 90-365 2 0.15 0.75 0.5 50m 200 20 50m 10 10 - General Purpose
60 60 5 0.5 90-333 10 0.15 1.6 0.5 50m 200 20 50m 10 10 - General Purpose
40 40 5 0.2 90-333 1 10m 0.4 50m 5m 250 20 10m 4 5 - General Purpose
50 50 5 0.2 63-555 6 1m 0.3 0.1 10m 140* 12 2m 5 12 General Purpose
600 600 7 0.28 54-310 5 10m 0.5 10m 1m 25* 10 10m 13* 10 - High Voltage Driver
180 140 7 4 100-300 5 1 0.37 3 0.3 120* 10 0.1 33* 10 - Very Low VCE(sat)
300 300 7 50m 54-310 10 10m 0.5 10m 1m 60* 10 10m 1.8* 20 High Voltage Driver
25 20 4 0.7 150-800 4 0.1 0.5 0.5 25m 180* 6 10m 12* 10 - Low VCE(sat)
40 40 6 0.2 100-300 1 10m 0.4 50m 5m 250 20 10m 4.5 5 - High Speed Switching
500 500 5 0.15 150-300 10 1m 0.5 50m 10m 50 20 10m 8 20 High Voltage Driver
25 20 4 0.65 150-800 4 0.1 0.5 0.5 25m 180* 6 10m - - - Low VCE(sat)
40 40 6 5 250- 2 0.5 0.16 2 0.2 60 10 0.1 105 10 Very Low VCE(sat)
60 50 5 0.1 120-400 6 2m 0.3 0.1 10m 80 10 1m 1.6 10 Low VCE(sat)
50 40 7.5 5.5 200-550 2 0.5 0.185 5.5 0.55 152* 10 50m 53* 10 - Very Low VCE(sat)
20 20 7 3 200-500 2 0.5 0.19 1.6 53m 160* 2 0.5 40* 10 Very Low VCE(sat)
40 40 5 1 300-800 5 0.1 0.5 1 0.1 150 10 50m 10 10 Very Low VCE(sat)
50 50 5 3 200-450 2 1 0.39 3 0.3 100 5 0.1 35 10 Very Low VCE(sat)
80 60 5 1 100- 5 1 0.34 1 0.1 150 10 50m 15 10 Very Low VCE(sat)
80 80 4 0.5 100- 1 0.1 0.25 0.1 10m 50 10 0.1 - - - Low VCE(sat)
80 60 5 3 100-300 2 0.5 0.6 3 0.3 100 5 0.1 30 10 - Very Low VCE(sat)
25 25 5 3 300-800 2 10m 0.5 3 0.1 100 5 50m 50* 10 Very Low VCE(sat)
15 15 5 3 500-1500 2 10m 0.5 3 50m 100 5 50m 50* 10 Very Low VCE(sat)
50 50 7 2 200-500 2 0.3 0.2 1 33m 180* 2 0.3 20* 10 Very Low VCE(sat)
30 30 6 3 120-390 2 0.1 0.5 2 0.1 190* 10 0.5 35* 10 - Very Low VCE(sat)
15 12 6 0.5 270-680 2 10m 0.25 0.2 10m 260* 2 10m 6.5* 10 - Low VCE(sat)
220 200 6 2 100-300 5 1 0.275 2 0.4 90* 10 0.1 32* 20 - Very Low VCE(sat)
180 140 6 4 100-300 5 1 0.37 3 0.3 100* 10 0.1 40* 20 - Very Low VCE(sat)
600 600 7 1 95-410 5 50m 1.05 0.1 10m 30* 10 50m 40* 10 - High Voltage Driver
600 600 7 1 30-120 5 0.1 1 0.3 60m 25* 10 50m 40* 10 - High Voltage Driver
40 32 5 2 82-390 3 0.5 0.8 2 0.2 130* 5 0.5 17* 10 Low VCE(sat)
50 50 5 2 70-240 2 0.5 0.5 1 50m 110* 2 0.5 15* 10 - Low VCE(sat)
40 40 5 0.6 100-300 2 0.15 0.75 0.5 50m 200 10 20m 8.5 10 - General Purpose
60 60 5 0.6 100-300 10 50m 1.6 0.5 50m 200 20 50m 8 10 - General Purpose
180 160 5 1.5 80-360 5 0.15 1 0.5 50m 180* 5 0.15 24* 10 Low VCE(sat)
200 200 6 1 60-280 5 0.2 0.5 0.5 50m 130* 5 0.2 20* 10 - Low VCE(sat)
120 100 6 1 140-330 2 0.15 0.5 0.5 50m 100 5 50m 10 10 Low VCE(sat)
400 400 6 0.3 80-300 10 10m 0.75 50m 5m 50 10 10m 3.5* 20 High Voltage Driver
40 40 5 0.2 100-300 1 10m 0.4 50m 5m 250 20 10m 4.5 5 General Purpose
400 400 7 0.3 70-200 10 20m 0.5 50m 5m 50 10 20m 7 20

High Voltage Driver
40 35 25 0.15 100-400 0.15 12m 0.2 24m 1m 30* 6 10m 20* 6 - High VEBO
300 300 7 0.3 60-280 10 10m 0.5 0.1 10m 70* 10 10m 3.5* 20 High Voltage Driver
60 60 5 0.5 100-300 10 0.15 0.4 0.15 15m 200 20 50m 8 10 - Low VCE(sat)
40 40 5 0.5 90-365 2 0.15 0.75 0.5 50m 200 20 50m 10 10 - Low VCE(sat)
50 50 8 0.5 68-330 3 10m 0.55 0.15 15m 230* 5 50m 12 10 Low VCE(sat)
40 40 6 0.2 90-333 1 10m 0.4 50m 5m 250 20 10m 4.5 5 High Speed Switching
160 150 5 0.6 90-270 5 10m 0.5 50m 5m 100-300 10 10m 6 10

Low VCE(sat)
80 60 5 1 130-300 5 0.5 0.6 1 0.1 150 10 50m 12 10 Low VCE(sat)
140 100 6 5 120-300 1 1 0.42 4 0.4 150* 10 0.1 45* 10 Low VCE(sat)
100 60 6 5 120-300 1 2 0.46 5 0.5 130* 10 0.1 72* 10 Low VCE(sat)

PNP B type = underdevelopment, Quantity = 5"wafer,* = typical,＄ = VCER,# = VCES
Chip VCBO
(V)		 VCEO
(V)		 VEBO
(V)		 IC
(A)		 hFE VCE(sat) fT Cob Complementary
Product		 Comment

(-)
VCE(V)
IC(A)
(V)
IC(A)
IB(A)
(MHz)
VCE(V)
IE(A)
(pF)
VCB(V)
60 60 6 2 120-270 2 0.5 0.35 1 50m 200* 2 0.5 23* 10 - Low VCE(sat)
80 80 4 0.2 100- 1 0.1 0.25 0.1 10m 50 1 0.1 - - General Purpose
40 32 5 0.5 82-390 3 10m 0.4 0.1 10m 200* 5 20m 7.5* 10 General Purpose
80 80 5 0.7 56-777 3 0.1 0.4 0.5 50m 100* 10 50m 20 10 - General Purpose
50 45 5 0.5 100-600 1 0.1 0.7 0.5 50m 100 5 10m 6* 10 Low VCE(sat)
40 32 5 2 82-433 3 0.5 0.8 2 0.2 100* 5 0.5 50* 10 General Purpose
40 30 5 2 82-390 2 1 0.33 2 0.1 - - - - - - General Purpose
80 80 8 1 56-390 10 0.15 0.4 0.5 50m 200* 10 50m 20 10 Low VCE(sat)
60 45$ 5 1 2K- 10 0.5 1.3 0.5 0.5m 200* 5 0.1 - - - Darlington
20 20 5 2 220- 2 0.5 0.21 2 0.2 100 5 0.1 50 10 Low VCE(sat)
32 20 5 1 85-375 1 0.5 0.5 1 0.1 40 5 50m 18* 10 - Low VCE(sat)
100 100 5 3 10-50 4 3 1.2 3 0.375 3 10 0.5 - - General Purpose
30 30 10 0.5 20K- 5 0.1 1.5 0.1 0.1m 125 5 10m - - Darlington
30 20 6 5 82-390 2 0.5 1 4 0.1 120* 6 50m 60* 20 - Low VCE(sat)
40 25 6 1.5 85-300 1 0.1 0.5 0.8 80m 100 10 50m 10* 10 Low VCE(sat)
40 32 5 0.8 68-400 3 0.1 0.4 0.5 50m 100 5 50m 25 10 High VEBO

■ No pages of this datasheet may be copied or reproduced without prior permission of PHENITEC SEMICONDUCTOR Corp.
■ The products and product specifications contained herein are subject to change without notice.
　　Upon actual use,therefore,please request specifications to be separately delivered.
Copyright© 2000-2011 PHENITEC SEMICONDUCTOR CORPORATION ,All Right Reserved.