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Silicon carbide is a semiconductor material with interesting properties such as
wide band gap and high breakdown field, the saturation electric drift velocity and
the thermal conductivity
These factors makes SiC a good candidate for the fabrication of high-power and
high-frequency electronic devices, with lower power losses and smaller size than
Si or GaAs counterparts.
We have been developing SiC devices for a long time.
Our goal is that, we would start mass production including OEM in 2018.
We will contribute in the future of the wideband gap semiconductor devices.